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| TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V RDS(ON) (max) 2.5 VGS(th) (max) 2.0V Order Number / Package TO-236AB* TN2106K1 TO-92 TN2106N3 Die TN2106ND Product marking for SOT-23: N1Lp where p = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Drain Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS 20V -55C to +150C 300C Gate Source SGD TO-236AB (SOT-23) top view TO-92 7-71 TN2106 Thermal Characteristics Package TO-236AB TO-92 ID (continuous)* 0.28A 0.30A ID (pulsed) 0.8A 1.0A Power Dissipation @ TA = 25C 0.36W 0.74W C/W 200 125 jc C/W 350 170 ja IDR* 0.28A 0.30A IDRM 0.8A 1.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 60 0.6 -3.8 0.1 2.0 -5.5 100 1 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 150 0.70 400 35 17 7 3 5 6 5 1.2 400 50 25 8 5 8 9 8 1.8 V ns ISD = 0.5A, VGS = 0V ISD = 0.5A, VGS = 0V ns VDD = 25V ID = 0.5A RGEN = 25 pF VGS = 0V, VDS = 25V, f = 1MHz 0.6 5.0 2.5 1.0 Typ Max Unit V V mV/C nA A A A %/C m Conditions ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA ID = 1mA, VGS = VDS VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 10V, VDS = 25V VGS = 4.5V, ID = 200mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 500mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT PULSE GENERATOR Rgen RL OUTPUT 7-72 TN2106 Typical Performance Curves Output Characteristics 2.5 Saturation Characteristics VGS = 10V 2.5 VGS = 10V 2.0 2.0 ID (amperes) 8V ID (amperes) 1.5 1.5 8V 1.0 1.0 6V 0.5 6V 0.5 4V 3V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 4V 3V VDS (volts) Transconductance vs. Drain Current 0.5 1.0 VDS (volts) Power Dissipation vs. Temperature 0.4 VDS = 25V 0.8 TO-92 GFS (siemens) 25C 0.2 PD (watts) 0.3 TA = -55C 0.6 0.4 125C 0.1 SOT-23 0.2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 SOT-23 (pulsed) 1.0 TA ( C) Thermal Response Characteristics Thermal Resistance (normalized) TO-236AB 0.8 TA = 25C PD = 0.36W TO-92 TC = 25C PD = 1W SOT-23 (DC) ID (amperes) 0.1 0.6 0.4 0.01 TA = 25C 0.2 0.001 0.1 1 10 100 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 7-73 TN2106 Typical Performance Curves BVDSS Variation with Temperature 10 1.1 8 On-Resistance vs. Drain Current V GS = 4.5V BVDSS (normalized) RDS(ON) (ohms) 6 VGS = 10V 1.0 4 2 0.9 0 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 Tj (C) Transfer Characteristics 1.0 ID (amperes) VGS(th) and RDS(ON) Variation with Temperature 2.0 VDS = 25V 0.8 1.2 RDS(ON) @ 10V, 0.5A 1.6 VGS(th) (normalized) 1.0 1.2 0.8 0.8 0.6 0.6 0.4 25C 125C 0.2 VGS(th) @ 1mA 0.4 0.4 0 0 2 4 6 8 10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V C (picofarads) VGS (volts) 6 50 CISS 25 4 VDS = 20V 92 pF COSS CRSS 2 38 pF 0 0 10 20 30 40 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 7-74 RDS(ON) (normalized) TA = -55C ID (amperes) |
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